Characterization of InAs/AlSb tunneling double barrier heterostructure by reverse electron emission spectroscopy with InAs as base electrode



In this contribution ballistic electron emission spectroscopic (BEES) measurements on InAs/AlSb tunneling double barrier heterostructure in the reverse voltage bias polarity (Auger condition) using top InAs as the base electrode are described. The tunneling double barrier heterostructure has a well thickness of 12 nm and a symmetric barrier thickness of 2 nm. We present spectroscopic results in the voltage range of –0.1 to –1.4 V. The observed intensity of the measured ballistic current is much higher than it is expected from the theory and published measurements. This is because the whole examined heterostructure is epitaxialy grown. In the voltage region below the barrier, thresholds connected only with a few different processes are observed in comparison with many thresholds observed for the usual bias polarity. The description of these processes will be presented. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)