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Keywords:

  • 68.37.Hk;
  • 68.55.Ln

Abstract

The EBIC investigations of extended defect system in GaN epitaxial layers with different electron mobility and dislocation density have been carried out. The recombination strength and defect cylinder radius for threading dislocations have been estimated from their EBIC profiles. Some cellular structure is revealed in the samples with the less-ordered mosaic structure that could be associated with the enhanced recombination activity of domain boundaries in such layers. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)