Electrical properties of gold at dislocations in silicon

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Abstract

Deep level transient spectrocsopy has been used to study deep levels in plastically deformed n-type silicon introduced by gold impurities at concentrations differing by about one order of magnitude. A DLTS-line is observed which shows the signatures of extended localized states and emission characteristics close to that of the gold acceptor level in dislocation-free silicon. It is attributed to gold accumulated in the strain-field of dislocations. The amplitude of the C-line typically found in plastically deformed silicon shows no correlation with the gold concentration. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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