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Keywords:

  • 61.72.Ji;
  • 61.72.Ln;
  • 66.30.Jt;
  • 78.30.Fs;
  • 78.60.Hk;
  • 81.05.Cy

Abstract

The interaction of sulfur with dislocations in GaAs has been studied by Raman, cathodoluminescence, and transmission electron microscopy. The carrier concentration increases at dislocations in a region extending up to 10 µm. At the same time the dislocations are decorated with As precipitates. The findings can be explained by a diffusion–drift–aggregation model describing the various processes of point defects at dislocations. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)