Study of defects in InxGa1–xSb bulk crystals

Authors

  • C. Díaz-Guerra,

    Corresponding author
    1. Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, 28040 Madrid, Spain
    • Phone: +34 91 394 4548, Fax: +34 91 394 4547
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  • M. F. Chioncel,

    1. Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, 28040 Madrid, Spain
    2. Physics Dpt. Faculty of Chemistry, Univ. of Bucharest, Bd. Elisabeta 14-12, 70346 Bucharest, Romania
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  • J. Vincent,

    1. Departamento de Física de Materiales, Facultad de Ciencias, Universidad Autónoma de Madrid, 28049 Cantoblanco (Madrid), Spain
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  • V. Bermúdez,

    1. Departamento de Física de Materiales, Facultad de Ciencias, Universidad Autónoma de Madrid, 28049 Cantoblanco (Madrid), Spain
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  • J. Piqueras,

    1. Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, 28040 Madrid, Spain
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  • E. Diéguez

    1. Departamento de Física de Materiales, Facultad de Ciencias, Universidad Autónoma de Madrid, 28049 Cantoblanco (Madrid), Spain
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Abstract

The homogeneity and luminescence properties of undoped and Te-doped InxGa1–xSb crystals grown by the Bridgman and Vertical Feeding methods have been studied by cathodoluminescence (CL) and X-ray microanalysis in a scanning electron microscope. CL micrographs reveal the presence of non-radiative grain boundaries and dislocations in the investigated samples. Annealing at 650 °C for 36 h significantly improves the structural quality and the compositional homogeneity of the Te-doped crystals. CL spectra of the ternary alloy were found to show features similar to those reported for GaSb. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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