Spin-resonant change of unlocking stress for dislocations in silicon

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Abstract

In this work we have observed a significant increase of unlocking stress for dislocations in Cz-Si caused by the microwave magnetic field in a condition of spin resonance corresponding to g-factor value of about 2.0. The result can be interpreted in terms of spin-dependent reactions of oxygen accumulated at dislocations. However, the specific atomistic model for the effect is still missing. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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