TEM observations of the coexistence of perfect and dissociated dislocations in SiC under high stress

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Abstract

TEM observations of the microstructure of 4H-silicon carbide deformed at 150 °C under 5 GPa are reported which confirm the coexistence of perfect and dissociated dislocations under such conditions. It is argued that dislocations are nucleated as perfect dislocations in the shuffle set, then they cross-slip in the more stable glide set where they dissociate into partials. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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