Study of Shockley partial dislocation mobility in highly N-doped 4H-SiC by cantilever bending

Authors


Abstract

Well-controlled population of dislocations are introduced in 4H-SiC by bending in cantilever mode and annealing at temperature ranging from 400 °C to 700 °C. The introduced-defects consist of double stacking faults (DSFs) bound by 30° Si(g) partial dislocations. Their expansion is asymmetric with a velocity directly measured on the surface of KOH etched-samples after deformation. Values of the activation energy and the stress exponent are given, and the formation of DSFs is discussed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Ancillary