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Keywords:

  • 07.05.Tp;
  • 61.72.Ff;
  • 68.37.Hk

Abstract

The computer simulation of EBIC contrast of uncharged dislocation as a function of excitation level is carried out. It is shown, that if a real distribution of excess carriers is taken into account under calculations a smooth decay of dislocation contrast close to logarithmic one can be obtained even for uncharged dislocations. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)