Dislocation photoluminescence in silicon crystals of various impurity contents



The dislocation-induced photoluminescence (DPL) is studied at 4.2 K in plastically deformed silicon of various impurities content. The effect of oxygen on the DPL spectra is distinctly displayed in Czochralski (CZ) silicon at the density of introduced dislocations ND < 2 × 107 cm–2. The effect of phosphorous on the DPL is observed at concentrations above 1016 cm–3 in FZ and CZ silicon. The peculiarities of different DPL spectra are explained by supposing that D1 and D2 lines are associated with edge type jogs. The type of dislocations is discussed on which the defects responsible for each of these lines can be located. Some arguments are adduced concerning the effect of the length of ideal 60° dislocations on their radiation energy. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)