Oxygen precipitation and creation of defects in neutron irradiated Cz-Si annealed under high pressure



Oxygen precipitation and creation of defects in Czochralski grown silicon (Cz-Si, with interstitial oxygen concentration 1.1 × 1018 cm–3) subjected to irradiation with neutrons (5 MeV, dose 1 × 1017 cm–2) and treated under atmospheric and high hydrostatic pressures (HP, up to 1.1 GPa) at 1270/1400 K are investigated by spectroscopic and X-Ray (synchrotron) methods. The presence of point defects created by neutron irradiation stimulates oxygen precipitation and creation of dislocations under HP, especially at 1270 K. The effect of pressure treatment is related to changes of concentration and mobility of silicon interstitials and vacancies as well as of the VO – type defects. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)