Original Paper

Oxygen precipitation and creation of defects in neutron irradiated Cz-Si annealed under high pressure

  1. A. Misiuk1,*,
  2. B. Surma2,
  3. C. A. Londos3,
  4. J. Bak-Misiuk4,
  5. W. Wierzchowski2,
  6. K. Wieteska5,
  7. W. Graeff6

Article first published online: 4 APR 2005

DOI: 10.1002/pssc.200460554

Issue

physica status solidi (c)

physica status solidi (c)

Volume 2, Issue 6, pages 1812–1816, April 2005

Additional Information

How to Cite

Misiuk, A., Surma, B., Londos, C. A., Bak-Misiuk, J., Wierzchowski, W., Wieteska, K. and Graeff, W. (2005), Oxygen precipitation and creation of defects in neutron irradiated Cz-Si annealed under high pressure. phys. stat. sol. (c), 2: 1812–1816. doi: 10.1002/pssc.200460554

Author Information

  1. 1

    Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland

  2. 2

    Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland

  3. 3

    University of Athens, Athens 15784, Greece

  4. 4

    Institute of Physics, PAS, Al. Lotnikow 32/46, 02-668 Warsaw, Poland

  5. 5

    Institute of Atomic Energy, 05-400 Otwock-Swierk, Poland

  6. 6

    HASYLAB at DESY, Notkestrasse 85, 22603 Hamburg, Germany

*Phone: +48 22 54 87 792, Fax: +48 22 847 06 31

Publication History

  1. Issue published online: 4 APR 2005
  2. Article first published online: 4 APR 2005
  3. Manuscript Accepted: 9 NOV 2004
  4. Manuscript Received: 11 SEP 2004

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Keywords:

  • 61.72.Ji;
  • 61.72.Tt;
  • 61.80.Hg;
  • 61.82.Fk;
  • 62.50.+p

Abstract

Oxygen precipitation and creation of defects in Czochralski grown silicon (Cz-Si, with interstitial oxygen concentration 1.1 × 1018 cm–3) subjected to irradiation with neutrons (5 MeV, dose 1 × 1017 cm–2) and treated under atmospheric and high hydrostatic pressures (HP, up to 1.1 GPa) at 1270/1400 K are investigated by spectroscopic and X-Ray (synchrotron) methods. The presence of point defects created by neutron irradiation stimulates oxygen precipitation and creation of dislocations under HP, especially at 1270 K. The effect of pressure treatment is related to changes of concentration and mobility of silicon interstitials and vacancies as well as of the VO – type defects. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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