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Keywords:

  • 68.35.Gy;
  • 68.37.Ps;
  • 68.55.Jk;
  • 81.05.Ea;
  • 81.15.Gh

Abstract

The MOVPE growth of high temperature AlxGa1–xN interlayers in the range 0 ≤ x ≤ 1 on GaN on Si(111) has been studied using AFM. The change in morphology has been linked to greater compressive strain within Al0.12Ga0.88N capping layers as the Al content of the interlayers increases. Additionally, it has been found that the changes in morphology of the AlGaN interlayers as the composition changes do not significantly change the effectiveness of SiN masking. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)