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Keywords:

  • 63.20.Dj;
  • 78.30.Fs;
  • 78.60.Hk;
  • 81.05.Ea;
  • 81.15.Gh

Abstract

We report on the performance of AlN, GaN and AlGaN epitaxy on SiC substrates in a low, 10–250, V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system. The properties of the epilayers are examined by cathodoluminescence and infrared spectroscopic ellipsometry. Layers of AlN, GaN and AlGaN with high compositional homogeneity and crystal quality in terms of a small broadening value of the E1(TO) phonon mode can be grown at a growth rate of up to 2 µm/h for the AlN. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)