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Original Paper
Novel noncontact thickness metrology for backend manufacturing of wide bandgap light emitting devices
Article first published online: 16 FEB 2005
DOI: 10.1002/pssc.200460606
Copyright © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Walecki, W. J., Lai, K., Souchkov, V., Van, P., Lau, S. and Koo, A. (2005), Novel noncontact thickness metrology for backend manufacturing of wide bandgap light emitting devices. phys. stat. sol. (c), 2: 984–989. doi: 10.1002/pssc.200460606
Publication History
- Issue published online: 16 FEB 2005
- Article first published online: 16 FEB 2005
- Manuscript Revised: 11 OCT 2004
- Manuscript Accepted: 11 OCT 2004
- Manuscript Received: 6 SEP 2004
- Abstract
- Cited By
Keywords:
- 42.25.Gy;
- 42.25.Hz;
- 78.66. Db;
- 78.66. Fd;
- 81.70.Fy;
- 85.60.Jb
Abstract
Low coherence optical interferometry (D. Huang et al., Science 254, 1178 (1991) [1]) has been proven to be an effective tool for characterisation of thin and ultra-thin semiconductor Si wafers (W. J. Walecki et al., 3rd International Workshop on Thin Semiconductor Devices – Manufacturing and Applications, Munich, Germany, November 25, 2002; Q. Wang et al., phys. stat. sol. (a) 155, 289 (1996) [2]). Purpose of this paper is to present an extension of this method to characterisation of ultra-thin compound wide bandgap wafers mounted on insulating carriers. We present alternative technique, which does not suffer from above discussed limitations, and can be easily integrated in the production tools, and provide accurate measurement of samples while they are being processed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)