Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN



Complementary characterization of the highly-excited nitrides has been performed by using time-resolved four-wave mixing and photoluminescence techniques. Defect-density and excitation dependent carrier recombination and transport have been studied in GaN heterostructures and free-standing crystals, grown by various technologies (hot-wall MOCVD, standard MOCVD, and HVPE) on different substrates (6H-SiC, 4H-SiC, or sapphire). The determined value of carrier lifetime varied from 300 ps in the GaN/SiC epilayers up to 3 ns in the bulk crystals, while the bipolar diffusion coefficient D was found to be in the range from 1.5 cm2/s to 2.9 cm2/s, correspondingly. An increase of D with excitation density in bulk HVPE crystals was attributed to screening of potential barriers around dislocations. A complete saturation of FWM diffraction in hot-wall MOCVD grown GaN/SiC heterostructures revealed a low threshold of stimulated recombination (0.5 mJ/cm2), as confirmed by spectra and intensity of photoluminesce. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)