Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

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Abstract

Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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