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Keywords:

  • 61.72.Ss;
  • 61.72.Vv;
  • 68.37.Ps;
  • 68.55.Ln;
  • 78.60.Hk;
  • 78.67.De

Abstract

Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)