GaN growth by sublimation sandwich method



Gallium nitride growth by Sandwich Sublimation Method has been studied. Experiments were carried out in a tubular quartz reactor with induction heating. The obtained GaN layers possessed irregular surface morphology with a thickness range up to 1 mm. Raman spectroscopy and X-ray studies were used to investigate the films. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)