GaN growth by sublimation sandwich method

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Abstract

Gallium nitride growth by Sandwich Sublimation Method has been studied. Experiments were carried out in a tubular quartz reactor with induction heating. The obtained GaN layers possessed irregular surface morphology with a thickness range up to 1 mm. Raman spectroscopy and X-ray studies were used to investigate the films. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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