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Keywords:

  • 68.37.Lp;
  • 68.37.Ps;
  • 68.65.Cd;
  • 81.15.Gh

Abstract

It has been found that AlGaN layers grown by MOCVD on sapphire substrates form superlattice (SL) along growth direction. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) found the phenomenon. The amount of Al in AlGaN layer oscillates between 10% and 20% The period of oscillations is close to 30 nm. TEM and AFM reveal a homogenous lateral distribution of the SL. The vertical extension covers the total layer thickness. It has been found that the appearance of SL depends on the state of the buffer layer on which the growth of AlGaN layer is initiated. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)