The atomic structure of defects formed during doping of GaN with rare earth ions

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Abstract

Transmission electron microscopy (TEM) structural investigations with atomic resolution have been carried out on different rare earth (RE) doped GaN samples. RE doping was done by two techniques: ion implantation on MOCVD substrates and in-situ by molecular beam epitaxy (MBE). In both cases typical stacking faults (SFs) are formed, there are shown to correlate with a possible RE segregation. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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