The atomic structure of defects formed during doping of GaN with rare earth ions



Transmission electron microscopy (TEM) structural investigations with atomic resolution have been carried out on different rare earth (RE) doped GaN samples. RE doping was done by two techniques: ion implantation on MOCVD substrates and in-situ by molecular beam epitaxy (MBE). In both cases typical stacking faults (SFs) are formed, there are shown to correlate with a possible RE segregation. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)