Growth by atomic layer epitaxy and characterization of thin films of ZnO

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Abstract

ABSTRACT Atomic layer epitaxy (ALE) was applied to grow thin films of monocrystalline and polycrystalline ZnO. Monocrystalline films were obtained only for GaN/Al2O3 substrates, whereas use of sapphire, silicon or soda lime glass resulted in either 3D growth mode or in polycrystalline films showing preferential orientation along the c axis. Successful Mn doping of ZnO films is reported, when using organic Mn precursors. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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