Current-voltage characteristics of superconducting flux flow transistor with a multi-channel fabricated by an inductively coupled plasma



In this paper, we have fabricated the superconducting flux flow transistor (SFFT) with two or three channels from epitaxial YBa2Cu3O7–x (YBaCuO) thin films with thickness 360 nm and channel width approximately 9.37 µm, length 5 µm, and especially the thickness 300 nm in case of etching by an inductively coupled plasma (ICP). We improved the characteristics of the SFFT by forming multi-channel in the drain current line. We performed the experiments of SFFTs controlled by the magnetic field generated by a gate current, which regulates the critical current through the channels of the drain current line and the gate current line. We also explained the process to get the I–V characteristic equations and to induce the external and internal magnetic fields by Biot-Savart's law. It was shown in this study that due to the magnetic coupling between channels, the critical current of a SFFT with three channels was higher than the critical current of two channels. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)