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Keywords:

  • 71.55.Gs;
  • 72.20.Jv;
  • 76.30.Mi;
  • 76.70.Hb;
  • 78.55.Et

Abstract

It is shown that the intensity of the oxygen vacancy (VO) related emission in ZnO at 2.45 eV correlates to the concentration of the donor level E4. E4 is located 530 meV below the conduction band and attributed to the VO0/++ recharging. Deep level transient spectroscopy (DLTS) experiments with optical excitation locate the VO2+/+ level position 140 meV below the conduction band and give evidence for the “negative- U” properties of the oxygen vacancies in ZnO. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)