Terahertz photoconductivity in GaAs/AlGaAs and HgTe/HgCdTe quantum Hall devices

Authors


Abstract

We present measurements of the THz photoconductivity on different quantum Hall systems. GaAs/AlGaAs and HgTe/HgCdTe (MCT) heterostructures with Hall-bar and Corbino geometry are investigated. A recipe for the preparation of metallic Corbino contacts on MCT is shown. The system is excited by the radiation of a p -Ge laser (tunable from 1.7 to 2.5 THz) and the photoresponse (PR) is measured versus the magnetic field B . We observe enhanced PR around integer filling factors (bolometric PR) and cyclotron resonance (CR) effects. Because of the lower effective mass in MCT, the CR in this system appears at a relatively low magnetic field (≈2 T). This is appropriate for possible applications. Finally we present time resolved measurements of the PR on the GaAs system. We find relaxation times from about 10 to over 200 ns, which depend on the geometry, the applied source-drain voltage and the on mobility of the sample. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Ancillary