GaN ballistic negative-differential-conductivity diode for potential THz applications

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Abstract

We present details of the development of a GaN ballistic diode designed with THz applications in mind. Parallel theoretical and experimental analysis has shown that negative-differential-resistance (NDR) can only be achieved when hot electrons are injected into the drift region, contact and spreading resistances must be minimized in order to maximize the field in the drift layer. NDR remains achievable even in the presence of collision dominated transport or when transport is space-charge limited. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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