1610-1642a/asset/olbannerleft.gif?v=1&s=4578bdca907a38d4fbb6bf196d3de22076799d7a)
Contributed Article
Experimental and theoretical study of substrate modes in (Al,In)GaN laser diodes
Article first published online: 1 JUN 2007
DOI: 10.1002/pssc.200674740
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Braun, H., Lauterbach, C., Schwarz, U. T., Laino, V., Witzigmann, B., Rumbolz, C., Schillgalies, M. O., Lell, A., Härle, V. and Strauß, U. (2007), Experimental and theoretical study of substrate modes in (Al,In)GaN laser diodes. Phys. Status Solidi C, 4: 2772–2775. doi: 10.1002/pssc.200674740
Publication History
- Issue published online: 1 JUN 2007
- Article first published online: 1 JUN 2007
- Manuscript Accepted: 10 NOV 2006
- Manuscript Revised: 30 OCT 2006
- Manuscript Received: 19 SEP 2006
Funded by
- Japanese Society for the Promotion of Science (JSPS)
- Abstract
- References
- Cited By
Keywords:
- 07.79.Fc;
- 42.55.Px;
- 78.66.Fd
Abstract
In semiconductor laser diodes, high refractive index epitaxial layers can act as parasitic waveguides and cause severe losses to the mode propagating in the laser waveguide. For (Al,In)GaN laser diodes the parasitic modes are typically caused by the SiC or GaN substrate or buffer layers. Substrate modes have an impact on near-field and far-field of the waveguide mode, on laser threshold, and on gain spectra. We present scanning near-field measurements of the substrate mode and demonstrate that the period of the standing wave in the GaN substrate varies over a wide range and critically depends on the effective refractive index of the waveguide mode.