Dielectric and magnetic birefringence in low-chlorine-doped n -type Zn1–xMnxSe

Authors


Abstract

Generalized spectroscopic ellipsometry over the spectral range from 1.24 to 3.34 eV is used to investigate a set of molecular beam epitaxy grown lowchlorine-doped n -type Zn1–xMnxSe films on (001)-oriented GaAs for x = 0.0, 0.02, 0.14 and 0.28. We present evidence for intrinsic optical anisotropy in dependence of the Mn concentration caused by wurtzitestructure domain formation. We employ a previously established dielectric function model that accounts for band-gap transition energy splitting in cubic semiconductors [Phys. Rev. B 60, 16618 (1999)]. Room temperature magneto-optic generalized ellipsometry in the Kerrconfiguration reveals the sp-d exchange energy splitting parameters upon expanding our anisotropy model by inclusion of chiral spin-polarized band-to-band transition contributions. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Ancillary