• 61.05.cp;
  • 68.37.Lp;
  • 68.55.−a;
  • 73.61.Ey;
  • 81.05.Ea;
  • 81.15.Hi


In this work, the growth of InN on GaN substrates by molecular beam epitaxy and the structural and electrical characterization are presented. The quality of InN is found to be a sensitive function of the III/V flux ratio and the substrate temperature. The structural quality of InN is characterized by X-ray diffraction, and the transport property is characterized by Hall effect measurements. An optimum growth window to obtain high structural quality InN with high electron mobility is observed. A strong correlation between the structural quality and the measured Hall mobility is shown. Transmission electron microscope study of InN shows high dislocation density (∼2 × 1011 cm–2 at 200 nm from the InN/GaN interface), which is the limiting factor for the transport property in InN. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)