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Keywords:

  • 73.40.Kp;
  • 73.61.Ey;
  • 81.15.Hi

Abstract

A study of the transport properties of polarizationinduced 2DEGs at MBE-grown single AlN/GaN heterostructures with different growth rates is reported. It is observed that faster growth rates lead to high mobilities, approaching ∼ 1600 cm2/Vs at 300 K and ∼ 6000 cm2/Vs at low temperatures for ultrathin (2.3 nm AlN/GaN) heterojunctions. By using a theoretical model in conjunction with experimentally measured transport properties, it is concluded that the 300 K sheet resistances of very high density 2DEGs at AlN/GaN heterojunctions are currently limited (∼ 170 Ω /□) by interface roughness scattering, and can be further reduced by improving the growth conditions. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)