Contributed Article

Electron transport properties of low sheet-resistance two-dimensional electron gases in ultrathin AlN/GaN heterojunctions grown by MBE

  1. Yu Cao*,
  2. Kejia Wang,
  3. Debdeep Jena

Article first published online: 22 APR 2008

DOI: 10.1002/pssc.200778723

Issue

physica status solidi (c)

physica status solidi (c)

Special Issue: 7th International Conference on Nitride Semiconductors (ICNS-7)

Volume 5, Issue 6, pages 1873–1875, May 2008

Additional Information

How to Cite

Cao, Y., Wang, K. and Jena, D. (2008), Electron transport properties of low sheet-resistance two-dimensional electron gases in ultrathin AlN/GaN heterojunctions grown by MBE. Phys. Status Solidi C, 5: 1873–1875. doi: 10.1002/pssc.200778723

Author Information

  1. Department of Electrical Engineering, University of Notre Dame, Indiana, 46556, USA

*Phone: +01-574-631-2926, Fax: +01-574-631-4393

Publication History

  1. Issue published online: 13 MAY 2008
  2. Article first published online: 22 APR 2008
  3. Manuscript Accepted: 17 DEC 2007
  4. Manuscript Revised: 21 SEP 2007
  5. Manuscript Received: 15 SEP 2007

Funded by

  • Office of Naval Research
  • DARPA

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Keywords:

  • 73.40.Kp;
  • 73.61.Ey;
  • 81.15.Hi

Abstract

A study of the transport properties of polarizationinduced 2DEGs at MBE-grown single AlN/GaN heterostructures with different growth rates is reported. It is observed that faster growth rates lead to high mobilities, approaching ∼ 1600 cm2/Vs at 300 K and ∼ 6000 cm2/Vs at low temperatures for ultrathin (2.3 nm AlN/GaN) heterojunctions. By using a theoretical model in conjunction with experimentally measured transport properties, it is concluded that the 300 K sheet resistances of very high density 2DEGs at AlN/GaN heterojunctions are currently limited (∼ 170 Ω /□) by interface roughness scattering, and can be further reduced by improving the growth conditions. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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