Contributed Article

Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs

  1. Tom Zimmermann,
  2. David Deen,
  3. Yu Cao,
  4. Debdeep Jena,
  5. Huili Grace Xing*

Article first published online: 22 APR 2008

DOI: 10.1002/pssc.200778724

Issue

physica status solidi (c)

physica status solidi (c)

Special Issue: 7th International Conference on Nitride Semiconductors (ICNS-7)

Volume 5, Issue 6, pages 2030–2032, May 2008

Additional Information

How to Cite

Zimmermann, T., Deen, D., Cao, Y., Jena, D. and Xing, H. G. (2008), Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs. Phys. Status Solidi C, 5: 2030–2032. doi: 10.1002/pssc.200778724

Author Information

  1. Electrical Engineering Department, University of Notre Dame, Notre Dame, Indiana 46556, USA

*Phone: +1 574 631 9108, Fax: +1 574 631 4393

Publication History

  1. Issue published online: 13 MAY 2008
  2. Article first published online: 22 APR 2008
  3. Manuscript Accepted: 26 DEC 2007
  4. Manuscript Revised: 28 NOV 2007
  5. Manuscript Received: 15 SEP 2007

Funded by

  • Mark Rosker (DARPA)

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Keywords:

  • 73.40.Kp;
  • 85.30.Tv;
  • 85.40.Ls

Abstract

AlN/GaN-based high electron mobility transistors with ultra-thin AlN barriers of 2.3 - 5 nm are attractive candidates for very high speed applications owing to the aggressive scalability such structures afford. We report the first study on formation of ohmic contacts to these high quality ultra-thin channel heterostructures (ns > 1x1013 cm–2 and μ > 900 cm2/Vs) with systematically varying barrier thicknesses. While the conventional ohmic contacts to AlGaN/GaN structures generally require high temperature annealing, these ohmic contacts were found to behave ohmic or near ohmic as-deposited. Annealing (400-860 0C) improves the contact resistance to a range of 0.8 - 2 ohm-mm but the annealing conditions strongly depend on the AlN thickness as well as the heterostructure quality (μ). All alloyed contacts show smooth morphology, making them suitable for e-beam lithographically defined gate patterning. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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