Contributed Article

Properties of Ga2O3-based (Inx Ga1–x)2O3 alloy thin films grown by molecular beam epitaxy

  1. Takayoshi Oshima1,*,
  2. Shizuo Fujita2

Article first published online: 11 JUN 2008

DOI: 10.1002/pssc.200779297

Issue

physica status solidi (c)

physica status solidi (c)

Special Issue: 34th International Symposium on Compound Semiconductors (ISCS-2007)

Volume 5, Issue 9, pages 3113–3115, July 2008

Additional Information

How to Cite

Oshima, T. and Fujita, S. (2008), Properties of Ga2O3-based (Inx Ga1–x)2O3 alloy thin films grown by molecular beam epitaxy. Phys. Status Solidi C, 5: 3113–3115. doi: 10.1002/pssc.200779297

Author Information

  1. 1

    Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan

  2. 2

    Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan

*Phone: +81 75 383 3041, Fax: +81 75 383 3031

Publication History

  1. Issue published online: 8 JUL 2008
  2. Article first published online: 11 JUN 2008
  3. Manuscript Accepted: 28 DEC 2007
  4. Manuscript Revised: 17 DEC 2007
  5. Manuscript Received: 30 OCT 2007

Funded by

  • Grant-in-Aid for Scientific Research and by a Global COE program from the Japan Society for the Promotion of Science

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Keywords:

  • 78.40.Fy;
  • 78.66.Li;
  • 81.15.Hi

Abstract

A series of Ga2O3-based (Inx Ga1–x)2O3 alloy thin films have been grown on c-plane sapphire substrates with a thin Ga2O3 buffer layer by plasma-assisted molecular beam epitaxy. At growth temperatures of 700 °C and higher, even with a slight inclusion of In2O3 to Ga2O3, for example, the film of (In0.08Ga0.92)2O3, exhibited a rough surface and degraded transmission spectrum resulting from phase separation of In2O3. Due to low temperature growth at 600 °C, however, the phase separation was suppressed for the In composition up to 35%, which was confirmed by X-ray diffraction measurement, and the films exhibited high transmittance over 85% with sharp absorption edges. The bandgap could be tuned form 5.0 to 4.0 eV. The results encourage the application of (Inx Ga1–x)2O3 thin films in short-wavelength optical devices. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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