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Keywords:

  • 68.35.bg;
  • 81.16.Be;
  • 81.40.−z;
  • 84.60.Jt

Abstract

Spin-coating technique was used to deposit precursor layers for chalcopyrite films of the series CuInX2 and Cu(In,Ga)X2 where X = S or Se or (S,Se). The influence of different parameters of the process, such as solution composition, air pre-treatment and chalcogenation treatment is discussed with respect to film applicability in photovoltaic devices. Layer morphology, stochiometry and crystalline structure varied widely with the different compositions and treatments. Highly oriented CuInSe2 and Cu(In,Ga)Se2 films were obtained. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)