Contributed Article

GaN layer growth by HVPE on m-plane sapphire substrates

  1. Alexander Usikov1,*,
  2. Lisa Shapovalov1,
  3. Vladimir Ivantsov1,
  4. Oleg Kovalenkov1,
  5. Alexander Syrkin1,
  6. Philippe Spiberg2,
  7. Robert Brown2

Article first published online: 26 MAY 2009

DOI: 10.1002/pssc.200880889

Issue

physica status solidi (c)

physica status solidi (c)

Supplement: International Workshop on Nitride Semiconductors (IWN 2008), see additional papers in Phys. Status Solidi A 206, No. 6 (2009) and Phys. Status Solidi B 246, No. 6 (2009)

Volume 6, Issue Supplement 2, pages S321–S324, June 2009

Additional Information

How to Cite

Usikov, A., Shapovalov, L., Ivantsov, V., Kovalenkov, O., Syrkin, A., Spiberg, P. and Brown, R. (2009), GaN layer growth by HVPE on m-plane sapphire substrates. physica status solidi (c), 6: S321–S324. doi: 10.1002/pssc.200880889

Author Information

  1. 1

    Technologies and Devices International an Oxford Instruments Company, 12214 Plum Orchard Dr., Silver Spring, MD 20904, USA

  2. 2

    Ostendo Technologies, Inc., 6185 Paseo del Norte, Suite 200, Carlsbad, CA 92011, USA

*Phone: +01 301 572 7834, Fax: +01 301 572 6435

Publication History

  1. Issue published online: 26 MAY 2009
  2. Article first published online: 26 MAY 2009
  3. Manuscript Accepted: 12 MAR 2009
  4. Manuscript Revised: 11 MAR 2009
  5. Manuscript Received: 10 SEP 2008

SEARCH

SEARCH BY CITATION

ARTICLE TOOLS

Get PDF (133K)

Keywords:

  • 61.05.cp;
  • 68.55.ag;
  • 73.61.Ey;
  • 78.55.Et;
  • 81.05.Ea

Abstract

Semipolar GaN layers were grown on m-plane sapphire substrates by HVPE. Insertion of AlxGa1–xN (x ∼ 0.1-0.6) layer in-between m-plane sapphire substrate and GaN layer promoted to improve crystalline quality and to grow of semipolar (11-22) plane GaN layers. X-ray diffraction (11-22) ω-scan rocking curve FWHM of 298 arcsec was measured for a 30 μm thick (11-22) GaN layer. Depending on growth conditions, m-plane GaN layer having micro-crystallites of other orientations (mainly of (11-24) plane GaN layer) was also grown. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Get PDF (133K)