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Keywords:

  • 61.46.Km;
  • 68.55.ag;
  • 81.05.Ea;
  • 81.07.Vb;
  • 81.15.Hi

Abstract

The behaviour of catalyst free GaAs nanowire growth is investigated on (111)Si substrate by molecular beam epitaxy under different Ga and As fluxes. It is found that the diameter of nanowire is increased by increasing the Ga flux, while it is decreased by increasing the As flux. The growth rate along the wire axis is enhanced by increasing the As flux under a constant Ga flux. Moreover, the Ga droplet at the top disappears by the growth interruption and the growth along the wire axis is strictly prohibited. By adopting the last result, the growth of GaAs/AlGaAs core-shell structure is attempted. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)