Contributed Article
Preparation and electrical characterization of amorphous BaO, SrO and Ba0.7Sr0.3O as high-k gate dielectrics
Article first published online: 8 DEC 2009
DOI: 10.1002/pssc.200982477
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Issue

physica status solidi (c)
Special Issue: 12th International Conference on the Formation of Semiconductor Interfaces (ICFSI-12)
Volume 7, Issue 2, pages 316–320, February 2010
Additional Information
How to Cite
Müller-Sajak, D., Cosceev, A., Brand, C., Hofmann, K. R. and Pfnür, H. (2010), Preparation and electrical characterization of amorphous BaO, SrO and Ba0.7Sr0.3O as high-k gate dielectrics. Phys. Status Solidi C, 7: 316–320. doi: 10.1002/pssc.200982477
Publication History
- Issue published online: 10 FEB 2010
- Article first published online: 8 DEC 2009
- Manuscript Accepted: 6 OCT 2009
- Manuscript Revised: 24 SEP 2009
- Manuscript Received: 6 JUL 2009
- Abstract
- Cited By
Keywords:
- 73.40.Qv;
- 77.55.+f;
- 81.05.Gc
Abstract
We report on the measurement of band offsets and electrical characterizations of amorphous BaO, SrO and Ba0.7Sr0.3O as alternative gate oxides grown on n-Si(001) at room temperature without further treatments. These materials provide relative dielectric constants close to those expected from bulk values even for ultra-thin films (equivalent oxide thicknesses below 1 nm) and posess very low rechargeable trap densities. Interface defect densities are comparable to other high-k materials for BaO and SrO films, but an order of magnitude lower for Ba0.7Sr0.3O. This demonstrates the importance of both chemical and structural interface effects (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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