Contributed Article

Optically-pumped lasing of semi-polar InGaN/GaN(1122) heterostructures

  1. A. Strittmatter1,*,
  2. M. Teepe1,
  3. Z. Yang1,
  4. C. Chua1,
  5. J. Northrup1,
  6. N. M. Johnson1,
  7. P. Spiberg2,
  8. R. G. W. Brown2,
  9. V. Ivantsov3,
  10. A. Syrkin3,
  11. L. Shapovalov3,
  12. A. Usikov3

Article first published online: 31 MAY 2010

DOI: 10.1002/pssc.200983557

Issue

physica status solidi (c)

physica status solidi (c)

Special Issue: 8th International Conference on Nitride Semiconductors (ICNS-8)

Volume 7, Issue 7-8, pages 1814–1816, July 2010

Additional Information

How to Cite

Strittmatter, A., Teepe, M., Yang, Z., Chua, C., Northrup, J., Johnson, N. M., Spiberg, P., Brown, R. G. W., Ivantsov, V., Syrkin, A., Shapovalov, L. and Usikov, A. (2010), Optically-pumped lasing of semi-polar InGaN/GaN(1122) heterostructures. physica status solidi (c), 7: 1814–1816. doi: 10.1002/pssc.200983557

Author Information

  1. 1

    Palo Alto Research Center, Palo Alto, CA, USA

  2. 2

    Ostendo Technologies, Inc., Carlsbad, CA, USA

  3. 3

    TDI, Inc., an Oxford Instruments Company, Silver Spring, MD, USA

*Phone: +1 650 812 4707, Fax: +1 650 812 4105

Publication History

  1. Issue published online: 20 JUL 2010
  2. Article first published online: 31 MAY 2010
  3. Manuscript Accepted: 20 NOV 2009
  4. Manuscript Revised: 19 NOV 2009
  5. Manuscript Received: 1 OCT 2009

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Keywords:

  • InGaN/GaN;
  • VPE;
  • growth structure;
  • lasers

Abstract

Results for long-wavelength emitters are presented for semi-polar InGaN/AlGaN/GaN heterostructures grown on GaN(11-22)/m-sapphire templates by metalorganic chemical vapor deposition. The semi-polar GaN layers were 10 to 25 μm thick and grown by HVPE on sapphire substrates. X-ray diffraction measurements indicate high crystallographic quality that approaches that of GaN(0001) layers on sapphire. Growth studies on the semi-polar GaN templates established the high efficiency of indium incorporation into InGaN layers, with a wide growth-temperature window up to 800°C for green light emitting structures. Basic LEDs were fabricated with peak emission up to 527 nm wavelength. Further growth studies established conditions for growing reasonably smooth, undoped InGaN/GaN laser heterostructures suitable for optical pumping. Optically-pumped lasing was achieved at wavelengths from 400 nm up to 500 nm. The results demonstrate the viability of semi-polar GaN(11-22) on sapphire templates for long-wavelength nitride laser diodes (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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