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Keywords:

  • GaPN;
  • MBE;
  • doping;
  • impurity levels;
  • electrical properties;
  • photoluminescence

Abstract

We have demonstrated the acceptor concentration control for p-type GaPN grown by molecular beam epitaxy (MBE) using Mg as the acceptor element. The hole concentration increases up to 2×1019 cm-3 at 300 K and does not remarkably vary after thermal treatment and thus Mg is successfully doped into GaPN. Subsequently, we have investigated the electrical and luminescence properties of Mg-doped p-type GaPN grown by MBE. The activation energy is estimated to be about 37 meV, indicating Mg is a shallow acceptor element for p-type GaPN grown by MBE. When the hole concentration is larger than ∼1018 cm-3, the photoluminescence (PL) intensity decreases with increasing the hole concentration. By time-resolved PL (TRPL) measurement, this PL quenching is caused by the non-radiative centres due to Mg doping when the hole concentration is larger than ∼1018 cm-3. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)