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Keywords:

  • GaAs;
  • AlGaAs;
  • MBE;
  • doping;
  • electrical properties;
  • SIMS;
  • trap levels

Abstract

C60 δ-doped GaAs and AlGaAs layers are grown by migration enhanced epitaxy method. Sticking coefficients of C60 on GaAs and AlGaAs surfaces and electrical characteristics of the layers are investigated by secondary ion mass spectroscopy (SIMS) and electrochemical capacitance voltage (ECV) measurements. SIMS profiles indicate that the layers have well-defined δ-doped structures, and the sticking coefficients of C60 on GaAs and AlGaAs surfaces are confirmed to be sufficiently high. ECV profiles of C60 δ-doped GaAs and AlGaAs layers suggest that C60 molecules in GaAs and AlGaAs lattices produce electron traps which can be charged or discharged by applied electric fields. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)