• AlGaN/GaN;
  • MOCVD;
  • HEMTs;
  • performance;
  • reliability


In this work we systematically study the structural, optical and electrical properties of AlGaN/GaN heterostructures grown by MOCVD 3-inch on SiC substrates The finally developed HEMTs demonstrate excellent high-voltage stability, high power performance and large power added efficiencies. For a drain bias of 100 V an output-power-density around 26 W/mm with 25 dB linear gain is obtained. On 36 mm gate width devices an output power beyond 100 W is achieved with a power added efficiency above 60% and a linear gain around 17 dB. Ruggedness on these large devices is proven by successfully passing harsh intentional device mismatch tests during operation at 50 V. Reliability is tested at a drain bias of 50 V. Under DC conditions a drain-current degradation below 20% after 20 years is extrapolated. Under RF stress the observed change in output power is well below 0.1 dB after a test duration of more than 500 h. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)