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Keywords:

  • GaAs;
  • MBE;
  • tunneling;
  • n-p-n;
  • p-n-in junctions;
  • electrical characteristics

Abstract

Sidewall n+p+n+ and p+n+in+ structures were fabricated by area-selective molecular layer epitaxy of GaAs, and electrical evaluation was carried out on the structures by J -V measurement. In the n+p+n+ structure, tunneling current decreased as the thickness of the p+ layer increased. An Esaki peak was also observed when the p+ layer was thicker than the depletion layer. The J -V characteristic of the p+n+in+ structure depended on the thickness of the n+ layer, and its curve at the reverse bias shifted to the low voltage side when the n+ layer became thick. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)