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Keywords:

  • AlGaN;
  • GaN;
  • heterojunctions;
  • field effect transistors

Abstract

We demonstrated high-temperature operation of normally off-mode junction-heterostructure-field-effect transistors (JHFETs) with a p-GaN gate that shows a very small shift of the threshold voltage against ambient temperature. Distinct normally off-mode operation with a maximum drain current of 93.2 mA/mm at 300 °C was realized. Therefore, normally off-mode GaN-based JFETs are greatly superior to Si-based devices as high-temperature switching devices. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)