Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate



We demonstrated high-temperature operation of normally off-mode junction-heterostructure-field-effect transistors (JHFETs) with a p-GaN gate that shows a very small shift of the threshold voltage against ambient temperature. Distinct normally off-mode operation with a maximum drain current of 93.2 mA/mm at 300 °C was realized. Therefore, normally off-mode GaN-based JFETs are greatly superior to Si-based devices as high-temperature switching devices. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)