Hg(1-x)CdxTe from short to long wave infrared on Si substrates grown by MBE



In this paper, we show the power of using molecular beam epitaxy (MBE) for the growth of the mercury cadmium telluride (HgCdTe) system. Abrupt composition profiles, changes in doping levels, or switching doping types are easily performed. It is shown that high quality material is achieved with Hg(1-x)CdxTe grown by MBE from a cadmium mole fraction of x =0.15 to x =0.72. Doping elements incorporation as low as 1015 cm-3 for both n-type and p-type material as well as high incorporation levels >1018cm-3 for both carrier types were achieved. Secondary ion mass spectrometry (SIMS) data, x-ray data, Hall data, the influence of doping incorporation with cadmium content and growth rate, etch pit density (EPD), composition uniformity determined from Fourier transform infrared (FTIR) transmission spectroscopy, and surface defect maps from low to high x values are presented to illustrate the versatility and quality of HgCdTe material grown by MBE. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)