Fabrication of c-axis oriented Ga-doped MgZnO-based UV transparent electrodes by molecular precursor method

Authors

  • Tohru Honda,

    Corresponding author
    1. Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiohji, 192-0015 Tokyo, Japan
    • Phone: +81 42 622 9291, Fax: +81 42 625 8982
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  • Takuto Oda,

    1. Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiohji, 192-0015 Tokyo, Japan
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  • Yoshihiro Mashiyama,

    1. Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiohji, 192-0015 Tokyo, Japan
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  • Hiroki Hara,

    1. Coordination Engineering Laboratory, Kogakuin University, 2665-1 Nakano-machi, Hachiohji, 192-0015 Tokyo, Japan
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  • Mitsunobu Sato

    1. Coordination Engineering Laboratory, Kogakuin University, 2665-1 Nakano-machi, Hachiohji, 192-0015 Tokyo, Japan
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Abstract

MgZnO films were fabricated by the molecular precursor method (MPM) for their application as UV transparent electrodes. It was clarified that annealing under suitable conditions using an Ar gas flow is effective for the realization of c-axis-oriented MgZnO films in the time of a pyrolysis reaction. The resistivity of the Ga-doped Mg0.1Zn0.9O film was 2.5 × 10-2 Ω · cm. The resistivity of the c-axis-oriented MgZnO films was lower than that of polycrystalline films. This is due to the reduction of the potential barrier at the boundaries of the crystallites. The spontaneous polarization affects the potential barrier. The c-axis orientation reduces the potential barrier along the deposition plane (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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