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Keywords:

  • Ge/Si;
  • waveguide;
  • photodetector;
  • electrical properties

Abstract

An equivalent circuit with an inductive element is presented for modelling a waveguide-type Ge/Si avalanche photodetector (APD) with a separate-absorption-charge-multiplication structure. A genetic algorithm optimization is used to extract the parameters for the elements included in the equivalent circuit by fitting the measured S22. Due to a resonance in the avalanche region, there is a peak enhancement for the frequency response of the APD when the bias voltage is relatively high. This is observed in the measurement and agrees with the theoretical calculation shown in this paper. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)