A scalable EE_HEMT based large signal model for multi-finger AlGaN/GaN HEMTs for linear and non-linear circuit design



A scalable non-linear large signal model based on the ADS EE_HEMT model was developed for AlGaN/GaN HEMTs for use in linear and non-linear circuit design. Excellent agreement between simulations and measurements was obtained for the DC, small signal and large signal power and efficiency performance including load-pull and source-pull contours. Excellent scalability of the model was also demonstrated (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)