AlGaN/GaN/AlGaN double heterojunction HEMTs on n-type SiC substrates

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Abstract

In this paper, we present a systematic study of AlGaN/GaN/AlGaN double heterojunction high-electron-mobility-transistor devices on n-type SiC substrate and the dependence of the GaN channel layer thickness. A device breakdown voltage enhancement was achieved by increasing the electron confinement in the transistor channel using an AlGaN back barrier-layer structure. An optimized electron confinement results in a scaling of breakdown voltage with device geometry, low on-state resistance and a significantly reduced sub-threshold drain leakage current. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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