Al2O3 passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance



In this work, we study the scaling characteristics of In0.17Al0.83N/GaN high electron mobility transistors (HEMTs). Scaling of both the DC and RF performance are studied as a function of InAlN thickness, gate recess and gate length to explore the design space of high frequency InAlN/GaN devices. Surface passivation by Al2O3 deposited using atomic layer deposition (ALD) is also investigated as an alternative to SixNy passivation. The fabricated devices give record maximum drain current density and transconductance (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)