Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications

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Abstract

Due to their large conduction-band offsets of up to 1.75 eV, GaN/Al(Ga)N quantum wells can support intersubband transitions at record short wavelengths, well into the low-loss transmission window of optical fibers. As a result, these quantum structures are promising to enable new intersubband device applications, including all-optical switching for ultra-broadband fiber-optic networks and emission of short-wave infrared radiation. Here we report our work on the development of high-quality GaN/Al(Ga)N quantum well structures designed for such applications. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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