Evaluation of AlGaN-based deep ultraviolet emitter active regions by temperature dependent time-resolved photoluminescence

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Abstract

Temperature dependent time-resolved photoluminescence is used to study the development of active regions for optoelectronic devices employing AlGaN nanostructures for deep-UV emission. The changing importance of dislocation versus point defects and their relationship to different forms of carrier localization are discussed. The results presented suggest that AlGaN nanostructure development for deep-UV emitters require both point defect/impurity suppression for improved efficiency and lower dislocation density for improved interface quality. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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