Contributed Article

Effect of low temperature and concentration KOH etching on high aspect ratio silicon structures

  1. Thomas Defforge1,
  2. Loïc Coudron1,
  3. Gaël Gautier1,*,
  4. Sébastien Kouassi1,
  5. Wilfried Vervisch2,
  6. François Tran Van3,
  7. Laurent Ventura1

Article first published online: 23 NOV 2010

DOI: 10.1002/pssc.201000028

Issue

physica status solidi (c)

physica status solidi (c)

Special Issue: 7th International Conference on Porous Semiconductors – Science and Technology (PSST 2010) • EnFI 2010 Conference – Engineering of Functional Interfaces

Volume 8, Issue 6, pages 1815–1819, June 2011

Additional Information

How to Cite

Defforge, T., Coudron, L., Gautier, G., Kouassi, S., Vervisch, W., Tran Van, F. and Ventura, L. (2011), Effect of low temperature and concentration KOH etching on high aspect ratio silicon structures. Phys. Status Solidi C, 8: 1815–1819. doi: 10.1002/pssc.201000028

Author Information

  1. 1

    Laboratoire de Microélectronique de Puissance, Université de Tours, 16 rue P. et M. Curie, 37071 Tours, France

  2. 2

    Equipe OPTO-PV, Institut Matériaux Microélectronique Nanosciences de Provence, Université Paul Cézanne Aix Marseille III, 13397 Marseille Cedex 20, France

  3. 3

    Laboratoire de PhysicoChimie des Matériaux et Biomolécules, Université de Tours, 37200 Tours, France

*Phone: +33 (0)2 47 42 49 37

Publication History

  1. Issue published online: 22 JUN 2011
  2. Article first published online: 23 NOV 2010
  3. Manuscript Accepted: 9 MAY 2010
  4. Manuscript Revised: 7 MAY 2010
  5. Manuscript Received: 12 MAR 2010

Funded by

  • Nano 2012 research program

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Keywords:

  • KOH etching;
  • macroporous silicon arrays;
  • DRIE scalloping

Abstract

In this paper, the effect of low concentrated alkaline solutions etching on texturized silicon structures at low temperatures has been studied. The silicon samples have been previously etched either from regular arrays by HF anodization on prepatterned substrates or by Deep Reactive Ion Etching (DRIE). After immersion in a low concentrated potassium hydroxide (KOH) solution mixed with isopropyl alcohol (IPA), the quality of the silicon sidewalls has been improved by an anisotropic etching. Thus, the trenches wall surface has been smoothed and planed. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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