Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes

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This article is corrected by:

  1. Errata: Erratum: Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes Volume 8, Issue 4, 1428, Article first published online: 5 April 2011

Abstract

Ge doping in Czochralski silicon (Cz-Si) crystal has been proposed as a successful application of the so-called “impurity engineering” leading to improved properties of Si wafers and/or devices. In an attempt to understand the beneficial effect of Ge doping on irradiation hardness for actual devices, substrates and p-on-n diodes, both with and without Ge doping, were exposed to electron irradiation and characterized using deep level transient spectroscopy (DLTS). Our results suggest a concentration of 1019 cm–3 Ge doping has only a limited effect on the total density of vacancy related deep levels in silicon (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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